ProsperProsper Ngabonziza

Assistant Professor of Physics

Ph.D., 2016 - University of Twente, The Netherlands

Experimental Condensed Matter Physics,
Quantum Materials and Device Physics

Louisiana State University 
Department of Physics & Astronomy
210-D Nicholson Hall, Tower Dr.
Baton Rouge, LA 70803-4001
225-578-0640-Office

pngabonziza@lsu.edu

Group webpage

Resume

Prosper Ngabonziza is an Assistant Professor of Physics in the Department of Physics & Astronomy of the Louisiana State University. After receiving a Bachelor of Science degree (BSc. in Physics) from the University of Rwanda (former National University of Rwanda), he completed with cum laude, in 2010, a postgraduate diploma in mathematical sciences at African Institute for Mathematical Sciences (AIMS), under the University of Cape Town in South Africa. In 2012, he completed a Master’s degree with cum laude in experimental physics from the University of Johannesburg in South Africa. He received in 2013 the S2A3 Bronze Medal awarded by the Southern Africa association for advancement of science to the best student who did a most meritorious master dissertation in a science department in South Africa. In 2016, he completed a PhD in engineering physics from the University of Twente, in The Netherlands. His PhD project was on topological insulators (TIs). He was combining thin film growth, characterizations and quantum transport studies of TIs. From October 2016, he was a Postdoc at the Max Planck Institute for Solid State Research in Stuttgart-Germany, in the department of solid-state quantum electronics. His research at Max Planck focused on quantum matter heterostructures fabricated from complex oxides with the goal to explore novel phenomena in devices fabricated from such heterostructures. After 6 years at Max Planck Institute, he joined the faculty at the Louisiana State University in 2022.

Service to Society & community Building Activities

He is actively involved in the The African Light Source (AfLS) project, as a Trustee and Deputy Chair of the Executive Committee of the African light source Foundation. The AfLS project is working towards building a synchrotron light source on the African continent that will contribute significantly to the African science renaissance.

In June 2019, he has been nominated as a Fellow to the Rwanda Academy of Science. Furthermore, he has been selected for a membership in the Global Young Academy for a period of 5 years beginning in June 2020. He served on the 2021/2022 Global Young Academy Executive Committee; and also, served as a Co-Chair of the Global Young Academy.

Research Interests

Prosper Ngabonziza’s research focuses on epitaxy of quantum materials and heterostructures. We explore novel phases in highly crystalline quantum matter heterostructures, and investigate emergent functionalities in quantum devices fabricated from such thin films and heterostructures. Investigated material systems have potential technological applications in such fields as quantum science and technology, oxide electronics, spintronics, as well as in energy and environmental sciences. Some of the research topics that we pursue include, but are not limited to:

  • Correlated Electron Systems: Research interests are on 4d correlated electron systems; in particular, ruthenates and/or magnetic functional materials (e.g., strontium ruthenate oxides of the Ruddlesden Popper phases). These systems exhibit complex interplay between the charge, spin, orbital and lattice degrees of freedom. We use bulk single crystals and thin films of these materials to explore their unique magnetic/electronic properties in the band structure, quantum transport and nanoscale electronic devices fabricated in a cleanroom facility.
  • Topological Quantum Materials and Thermoelectricity: We explore the potential of topological insulator boundary states for thermoelectricity to realize a variety of high-performance thermoelectric devices. Combined studies of thin film growth and characterizations, as well as quantum transport explorations of novel functionalities in nanoscale topological devices are performed. 
  • Complex Oxide Heterostructures: Our research interests are on transparent conducting oxide heterostructures for applications in the next-generation of transparent electronic devices; and on ionic conducting oxide heterostructures for applications in clean energy technologies.

Current and Select Publications

  1. P. Ngabonziza*, J. Park, W. Sigle, P. A. van Aken, J. Mannhart, and D. G. Schlom, “Employing High-temperature-grown SrZrO3 Buffer to Enhance the Electron Mobility in La:BaSnO3-based Heterostructures” Applied Physics Letters 122, 241902 (2023).
  2. M. C. Newton, S. H. Connell, E. P. Mitchell, S. K. Mtingwa , P. Ngabonziza, L. Norris , T. Ntsoane and D. A. K. Traore, “Building a brighter future for Africa with the African Light Source” Nature Reviews Physics 5, 74 (2023).
  3. A.-L. Rüland*, N. Rüffn, K. Cramer, P. Ngabonziza, M. Saxena, and S. Skupien. “Science Diplomacy from the Global South: the Case of Intergovernmental Science Organizations” Science and Public Policy 00, 1-12 (2023).
  4. Prosper Ngabonziza*, “Quantum transport and potential of topological states for thermoelectricity in Bi2Te3 thin films” Nanotechnology 33, 192001 (2022).
  5. G. H. Gebreyesus*, P. Ngabonziza*, J. Nagura, S. Nicola, O. Akin-Ojo, and R. M. Martin*, “Electronic structure and magnetism of the triple-layer ruthenate Sr4Ru3O10” Physical Review B 105, 165119 (2022).
  6. A. P. Nono Tchiomo, E. Carleschi, Aletta R. E. Prinsloo, W. Sigle, P. A. van Aken, J. Mannhart, P. Ngabonziza*, and B. P. Doyle*, “Combined Spectroscopy and Electrical Characterization of La:BaSnO3 Thin Films and Heterostructures” AIP Advances 12 (2022).
  7. P. Ngabonziza, Y. Wang, P. van Aken, J. Maier, and J. Mannhart “Inelastic electron tunneling spectroscopy at high-temperatures” Advanced Materials 33, 2007299 (2021).
  8. P. Ngabonziza, R. Merkle, Y. Wang, P. van Aken J. Maier and J. Mannhart  “2D doping of proton conductors: BaZrO3-based heterostructures” Advanced Energy Materials 11, 2003267 (2021).
  9. M. P. Stehno, P. Ngabonziza*, H. Myoren, and A. Brinkman “Josephson effect and charge distribution in thin Bi2Te3 topological insulators” Advanced Materials 32, 1908351 (2020).
  10. P. Ngabonziza*, E. Carleschi, V. Zabolotnyy, A. Taleb-Ibrahimi, F. Bertran, R. Fittipaldi, V. Granata, M. Cuoco, A. Vecchione, and B. P. Doyle* “Fermi surface and kink structures in Sr4Ru3O10 revealed by synchrotron-based ARPES” Scientific Reports 10, 21062 (2020).
  11. W. Braun, M. Jäger, G. Laskin, P. Ngabonziza, W. Voesch, P. Wittlich, and J. Mannhart, “In-situ thermal preparation of oxide surfaces” APL Materials 8, 071112 (2020).
  12. A. P. Nono Tchiomo, W. Braun, B. P. Doyle, W. Sigle, P. Van Aken, J. Mannhart, and P. Ngabonziza* “High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures” APL Materials 7, 041119 (2019).
  13. S. H. Connell, S. K. Mtingwa, S. K. Abdel-Aal, S. Biira, T. D’Almeida, T. Dobbins, N. Khumbah, B. Masara, E. P. Mitchell, L. Norris, P. Ngabonziza, T. Ntsoane, A. Wague, and H. Winick, “Towards an African light source” Biophysical Reviews 11, 499 (2019).
  14. P. Ngabonziza, Y. Wang, and A. Brinkman “Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films” Physical Review Material 2, 044204 (2018).
  15. A. P. Nono Tchiomo, G. Babu-Geetha, E. Carleschi, P. Ngabonziza, and B. P. Doyle, “Surface characterization of clean SrTiO3 (100) substrates by X-ray photoelectron spectroscopy”  Surface Science Spectra 25, 024001-1-13 (2018).
  16. P. Ngabonziza, M. P. Stehno, H. Myoren, V. A. Neumann, G. Koster, and A. Brinkman “Gate-tunable transport properties of in-situ capped Bi2Te3 topological insulator thin films”. Advanced Electronic Material 2, 1600157 (2016).
  17. P. Ngabonziza, R. Heimbuch, N. de Jong, R. A. Klaassen, M. P. Stehno, M. Snelder, A. Solmaz, S. V. Ramankutty, E. Frantzeskakis, E. Van Heumen, G. Koster, M. S. Golden, H. J.W. Zandvliet, and A. Brinkman “In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects” Physical Review B 92, 035405 (2015).

 

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